Jeremy RashidJeremyRashid
Associate, Intellectual Property
Jeremy Rashid, Ph.D. is an associate in the firm’s Intellectual Property practice and is an experienced U.S. patent agent. His work includes inter partes and ex parte proceedings before the Patent Trial and Appeals Board (PTAB), and assisting with patent infringement and validity, due diligence and freedom-to-operate analyses.
Jeremy has a Ph.D. in electronics and semiconductor devices. He draws on his deep technical knowledge based on his doctoral research focused on wide bandgap semiconductor physics and devices, and high temperature electronic packaging for automotive applications, as well as his master's research focused on silicon carbide power semiconductor devices.
“Numerical parameterization of CVD single crystal diamond,” IEEE Transactions on Electron Devices, vol. 55, pp. 2744‐56, Lead Author
2008
“δ‐Doped Single Crystal Diamond Schottky m‐i‐p+ Diodes,” IEEE Power Semiconductor Devices and ICs, 2008, pp. 249‐52, Lead Author
2008
“Novel Packaging Techniques for High Power Electronics in SiC,” Material Science Forum, vols. 556‐557, pp. 971‐74, Co-Author
2007
“High Temperature Direct Cooled Inverter Module for Hybrid Electric Vehicle Application,” Material Science Forum, vols. 556‐557, pp. 709‐12, Co-Author
2007
“Optically Triggered Schottky Barrier Diodes in Single Crystal Diamond,” Journal of Diamond and Related Materials, vol. 14, pp. 499‐503, Co-Author
2005
“Trench oxide protection for 10kV 4H‐SiC trench MOSFETs,” IEEE Power Electronics and Drive Systems, vol. 2, pp. 1354‐58, Lead Author
2003